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SS-401 Datasheet(PDF) 2 Page - STMicroelectronics

Part # SS-401
Description  Back to back SCR module
PDF  7 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SS-401 Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
MSS40, MSS50
2/7
1
Characteristics
Table 3.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
MSS40
MSS50
VDRM/VRRM Repetitive peak off-state voltage
1200
800
1200
V
IT(RMS)
RMS on-state current
Tc = 80° C
55
A
Tc = 85° C
70
ITSM
Non repetitive surge peak on-state
current
tp = 16.7 ms
Tj = 25° C
420
630
A
tp = 20 ms
400
600
I2tI2t Value for fusing
tp = 10 ms
Tj = 25° C
800
1800
A2S
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 120 Hz
Tj = 125° C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125° C
4
A
PG(AV)
Average gate power dissipation
Tj = 125° C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
° C
VRGM
Maximum peak reverse gate voltage
5
V
Table 4.
Electrical characteristics (Tj = 25° C, unless otherwise specified)
Symbol
Test Conditions
Value
Unit
MSS40
MSS50
IGT
VD = 12 V
RL = 33 Ω
MIN.
5
mA
MAX.
50
VGT
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 kΩ
Tj = 125° C
MIN.
0.2
V
IH
IT = 500 mA Gate open
MAX.
80
mA
IL
IG = 1.2 IGT
MAX.
120
mA
dV/dt
VD = 67 % VDRM Gate open
Tj = 125° C
MIN.
1000
V/µs
VTM
ITM = 80 A tp = 380 µs
Tj = 25° C
MAX.
1.7
V
ITM = 100 A tp = 380 µs
1.7
Vt0
Threshold voltage
Tj = 125° C
MAX.
0.85
V
Rd
Dynamic resistance
Tj = 125° C
MAX.
11
7
m
Ω
IDRM
IRRM
VDRM = VRRM
Tj = 25° C
MAX.
20
µA
Tj = 125° C
10
mA
Table 5.
Thermal reistances
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
MSS40
0.6
° C/W
MSS50
0.45



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