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STB18NF30 Datasheet(PDF) 1 Page - STMicroelectronics |
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STB18NF30 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page  This is information on a product in full production. August 2013 DocID018590 Rev 3 1/15 STB18NF30 Automotive-grade N-channel 330 V, 160 m Ω typ., 18 A STripFET™ II Power MOSFET in a D²PAK package Datasheet - production data Figure 1. Internal schematic diagram Features • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • 175 °C junction temperature Applications • Switching applications Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. D²PAK 1 3 TAB Order code VDSS RDS(on) max. ID STB18NF30 330 V 180 m Ω 18 A Table 1. Device summary Order code Marking Package Packaging STB18NF30 18NF30 D²PAK Tape and reel www.st.com |
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