MS6N40 datasheet(3/6 Pages) BWTECH

Part #	MS6N40

Description	N-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	BWTECH [Bruckewell Technology LTD]

Direct Link	http://www.bruckewell-semi.com

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3 / 6 page

MS6N40

N-Channel Enhancement Mode Power MOSFET

Publication Order Number: [MS6N40]

Dynamic Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

td(on)

VDS = 200 V,

ID = 5.5 A,

RG = 25 Ω

110

td(off)

190

120

CISS

VGS = 0 V,

VDS = 25 V,

f= 1MHz

670

870

COSS

125

CRSS

Source-Drain Diode Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

5.5

ISM

VSD

IS = 4.5 A , VGS = 0 V

1.5

trr

IS = 5.5 A, VGS = 0 V diF/dt = 100 A/μs

220

Qrr

NOTE:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. IAS=5.5 A, VDD=50V, RG=25W, Starting TJ =25°C

3. ISD≤5.5 A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C

4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature

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