MSF6N65

N-Channel Enhancement Mode Power MOSFET

Publication Order Number: [MSF6N65]

Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

Maximum lead temperature for soldering purposes,

1/8'' from case for 5 seconds

300

°C

TPKG

Maximum Temperature for Soldering @ Package Body for 10

seconds

260

°C

Total Power Dissipation (TC = 25 °C)

Derating Factor above 25 °C

54

W

0.3

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Storage Temperature

150

°C

Notes;

1. Repetitive Rating: Pulse width limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

Max.

Units

Thermal Resistance, Junction-to-Case

2.3

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

Static Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Drain-Source Breakdown

Voltage

600

--

--

V

△BV

DSS

/

△T

J

Breakdown Voltage

Temperature Coefficient

--

0.65

--

V/°C

Gate Threshold Voltage

2.0

--

4.0

V

Zero Gate Voltage Drain

Current

--

--

1

10

μA

Gate-Body Leakage

Forward

--

--

±100

nA

Static Drain-Source

On-Resistance

--

1.23

1.5

Ω

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Total Gate Charge

--

19

--

nC

Gate-Source Charge

--

5.1

--

nC

Gate-Drain Charge

--

6.9

--

nC