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MSF6N90 Datasheet(PDF) 2 Page - Bruckewell Technology LTD

Part # MSF6N90
Description  900V N-Channel MOSFET
PDF  7 Pages
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Manufacturer  BWTECH [Bruckewell Technology LTD]
Direct Link  http://www.bruckewell-semi.com
Logo BWTECH - Bruckewell Technology LTD

MSF6N90 Datasheet(HTML) 2 Page - Bruckewell Technology LTD

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MSF6N90
900V N-Channel MOSFET
Publication Order Number: [MSF6N90]
© Bruckewell Technology Corporation Rev. A -2014
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
PD
Total Power Dissipation (TC = 25 °C)
Derating Factor above 25 °C
56
W
0.48
W/°C
TJ,TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
300
°C
• Drain current limited by maximum junction temperature
Thermal characteristics (Tc=25°C unless otherwise noted)
Symbol
Parameter
Max.
Units
RθJC
Junction-to-Case
2.25
°C/W
RθJA
Junction-to-Ambient
62.5
On Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
VGS
Gate Threshold Voltage
VDS=VGS,ID=250μA
3.0
--
5.0
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V,ID=3A
--
1.95
2.4
Ω
Off Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown
Voltage
VGS=0 V , ID=250μA
900
--
--
V
△BV
DSS
/
△T
J
Breakdown Voltage
Temperature Coefficient
ID=250μA, Referenced to 25°C
--
1.03
--
V/°C
IDSS
Zero Gate Voltage Drain
Current
VDS=900V , VGS= 0 V
VDS=720V , TC= 125°C
--
--
10
100
μA
IGSSF
Gate-Body Leakage
Current, Forward
VGS=30V , VDS=0 V
--
--
100
nA
IGSSR
Gate-Body Leakage
Current, Reverse
VGS=-30V , VDS=0 V
--
--
-100
nA
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
CISS
Input Capacitance
VDS=25V, VGS=0V,
f=1.0MHz
--
1500
2010
pF
COSS
Output Capacitance
--
145
190
pF
CRSS
Reverse Transfer Capacitance
--
15
20
pF



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