GMBTA42 datasheet(2/3 Pages) GSME

2 / 3 page

桂林斯壯微電子有限責任公司

Guilin

Guilin Strong

Strong

Strong Micro-Electronics

Micro-Electronics

Micro-Electronics Co.,Ltd.

Co.,Ltd.

GMBTA42(销售型號 MMBTA42) GMBTA43(销售型號 MMBTA43)

■

ELECTRICAL

ELECTRICAL CHARACTERISTICS

CHARACTERISTICS

CHARACTERISTICS 電特性

(TA

=25

=25℃ unless

unless

unless otherwise

otherwise

otherwise noted

noted

noted 如無特殊說明，溫度爲 25℃))))

Characteristic

特性參數

Symbol

符號

Min

最小值

Max

最大值

Unit

單位

Collector-Emitter Breakdown Voltage(3)

集電極-射極擊穿電壓(IC=1mAdc,IB=0)

V(BR)CEO

GMBTA42

GMBTA43

300

200

—

Vdc

Collector-Base Breakdown Voltage

集電極-基極擊穿電壓(IC=100µAdc,IE=0)

V(BR)CBO

GMBTA42

GMBTA43

300

200

—

Vdc

Emitter-Base Breakdown Voltage

發射極-基極擊穿電壓(IE= 100µAdc ,IC=0)

V(BR)EBO

6.0

—

Vdc

Emitter Cutoff Current 發射極截止電流

(VEB=6.0Vdc,Ic=0)

(VEB=4.0Vdc,Ic=0)

IEBO

GMBTA42

GMBTA43

—

100

nAdc

Collector Cutoff Current 集電極截止電流

(VCB=200Vdc,IE=0)

(VCB=160Vdc,IE=0)

ICBO

GMBTA42

GMBTA43

—

100

nAdc

DC Current Gain 直流電流增益

HFE

—

(Ic=1.0mAdc,VCE=10.0Vdc)

—

(Ic=10mAdc,VCE=10.0Vdc)

300

(Ic=30mAdc,VCE=10.0Vdc)

GMBTA42

GMBTA43

—

Collector-Emitter Saturation Voltage

集電極-發射極飽和壓降

(Ic=20mAdc, IB=2.0mAdc)

VCE(sat)

GMBTA42

GMBTA43

—

0.5

Vdc

Base-Emitter Saturation Voltage

基極-發射極飽和壓降

(Ic=20mAdc, IB=2.0mAdc)

VBE(sat)

—

0.9

Vdc

Current-Gain-Bandwidth Product

電流增益帶寬乘積

(Ic=10mAdc,VCE=20Vdc,f=100MHz)

MHz

Collector-Base Capacitance 輸出電容

(VCB=20.0Vdc, IE=0, f=1.0MHz)

Ccb

GMBTA42

GMBTA43

—

3.0

4.0

１．FR-5=1.0×0.75×0.062in.

２．Alumina=0.4×0.3×0.024in.99.5%alumina.

３．Pulse Width<300us;Duty Cycle<2.0%.

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