MMBT4403 datasheet(1/2 Pages) MAKOSEMI

Part #	MMBT4403

Description	Plastic-Encapsulate Transistors

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

Direct Link	http://www.makosemi.hk/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

Switching transistor)

Marking:2T

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-40

V

Collector-Emitter Voltage

V

CEO

-40

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

600

mA

Collector Power Dissipation

PC

300

mW

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Collector-base breakdown voltage

VCBO

IC=-100μA , IE=0

-40

V

Collector-emitter breakdown voltage

VCEO

IC= -1mA , IB=0

-40

V

Emitter-base breakdown voltage

VEBO

IE=-100μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-35V, IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE=-35 V, IB=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-4V,IC=0

-0.1

μA

DC current gain

hFE

VCE=-2V, IC= -150mA

100

300

Collector-emitter saturation voltage

VCE(sat)

IC=-150mA, IB=-15mA

-0.4

V

Base-emitter saturation voltage

VBE(sat)

IC=- 150mA, IB=-15mA

-0.95

V

Transition frequency

f T

VCE= -10V, IC= -20mA

f = 100MHz

200

MHz

(PNP)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

MMBT4403

MAKO Semiconductor Co., Limited

4008-378-873

http://www.makosemi.hk/

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MMBT4403 Datasheet(PDF) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED

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