VBO36 datasheet(2/2 Pages) IXYS

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20100303a

VBO 36

IXYS reserves the right to change limits, test conditions and dimensions.

F [V]

100

150

200

0.5

1.5

2.5

150°C

25°C

100

101

102

103

t [ms]

0 V

RRM

½ V

RRM

1 V

RRM

FSM [A]

VJ = 45°C

VJ = 150°C

480

500

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

1.9

t [ms]

102

103

104

150°C

45°C

FAVM [A]

amb [K]

100

150

135

120

105

sin. 180°

rec. 120°

rec. 60°

rec. 30°

7.14

2.86

1.43

0.71

0.36 = R

thCA [K/W]

C [°C]

sin. 180°

rec. 120°

rec. 60°

rec. 30°

100

150

200

t [s]

0.01

0.1

thJK

thJC

100

Fig. 1 Forward current versus

voltage drop per diode

Fig. 2 Surge overload current per diode

FSM: crest value, t: duration

Fig. 3 I2t versus time (1-10 ms)

per diode or thyristor

Fig. 4 Power dissipation vs. direct output current and ambient temperature

Fig. 5 Maximum forward current

at case temperature

Fig. 6 Transient thermal impedance per diode or thyristor, calculated

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