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2SA1015-H Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1015-H Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page ![]() SMD Type www.kexin.com.cn 2 Transistors PNP Transistors 2SA1015 ■ Typical Characterisitics Static characteristics Collector-Emitter Voltage, BVCEO (V) -0 -4 -8 -12 -16 -20 0 -10 -20 -30 -40 -50 IB=-300µA DC Current Gain Collector current, IC (mA) VCE=-6V IB=-250µA IB=-200µA IB=-150µA IB=-100µA IB=-50µA -10-1 -100 -101 -102 -103 100 101 102 103 Base-Emitter on Voltage Base-Emitter Voltage, BVBEO (V) 0 -0.2 -0.4 -0.6 -0.8 -1.0 VCE=-6V Collector Current, IC (mA) Saturation voltage IC=10xIB -10-1 -100 -101 -102 -10-1 -100 -101 -102 -103 -10-2 -10-1 -100 -101 VCE(SAT) VBE(SAT) e c n a ti c a p a C t u p t u O r o t c e ll o C t c u d o r P h t d i w d n a B - n i a G t n e rr u C Collector current, IC (mA) VCE=-6V Collector-Base Voltage, BVCBO (V) f=1MHz IE=0 -10-1 -100 -101 -102 100 101 102 103 -100 -101 -102 -103 -10-1 -100 -101 -102 -10-1 |
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