Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA

High voltage:VCEO=50V

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

60

V

Collector-Emitter Voltage

V

CEO

50

V

Emitter-Base Voltage

V

EBO

5

V

Collector Current -Continuous

I

C

0.1

A

Collector Power Dissipation

0.2

W

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=100μA,IE=0

60

V

Collector-emitter breakdown voltage

VCEO

IC=1mA,IB=0

50

V

Emitter-base breakdown voltage

VEBO

IE=100μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=60V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=6V,IC=1mA

90

200

600

Collector-emitter saturation voltage

VCE(sat)

IC=100mA,IB=10mA

0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=100mA,IB=10mA

1

V

Transition frequency

fT

VCE=6V,IC=10mA

250

MHz

CLASSIFICATIONOF

Rank

L4

L5

L6

L7

Range

90-180

135-270

200-400

300-600

(NPN)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

C1623

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/