2

Die Characteristics

DIE DIMENSIONS

Size: 1750

µm x 2330µm (69 mils x 92 mils)

Thickness: 483

µm (19 mils)

GLASSIVATION

Type: Nitride

Thickness: 4k

Å

METALLIZATION

Metal 1

Type: AlCu(2%)/TiW

Thickness: 8k

Å

Metal 2

Type: AlCu(2%)

Thickness: 16k

Å

SUBSTRATE

DI, Bonded Wafer

BACKSIDE FINISH

Silicon

SUBSTRATE POTENTIAL

Floating (Recommend connection to V-)

TRANSISTOR COUNT:

180

Metallization Mask Layout

HS-1254RH

NOTE:

1. This is an optional GND pad. Users may set a GND reference, via this pad, to ensure the TTL compatibility of the DISABLE inputs when

using asymmetrical supplies (e.g., V+ = 10V, V- = 0V).

-IN1

OUT1

-IN2

GND (SEE NOTE 1)

V-

OUT2

V+

NC

NC

+IN1

+IN2

DISABLE1

DISABLE2

V-

HS-1254RH