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HUF76013P3 Datasheet(PDF) 1 Page - Intersil Corporation |
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HUF76013P3 Datasheet(HTML) 1 Page - Intersil Corporation |
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1 / 11 page ![]() 1 TM File Number 4849 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000 UltraFET® is a registered trademark of Intersil Corporation. HUF76013P3, HUF76013D3S 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs The HUF76013 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance results in lower driver and lower switching losses thereby increasing the overall system efficiency. Symbol Packaging Features • 20A, 20V -rDS(ON) = 0.022Ω, VGS = 10V -rDS(ON) = 0.030Ω, VGS = 5V • PWM Optimized for Synchronous Buck Applications • Fast Switching • Low Gate Charge -Qg Total 14nC (Typ) • Low Capacitance -CISS 624pF (Typ) -CRSS 71pF (Typ) HUF76013D3S JEDEC TO-252AA HUF76013P3 JEDEC TO-220AB D G S GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE) DRAIN SOURCE GATE Ordering Information PART NUMBER PACKAGE BRAND HUF76013P3 TO-220AB 76013P HUF76013D3S TO-252AA 76013D NOTE: When ordering, use the entire part number. Add the suffix T to obtain the HUF76013D3S in tape and reel, e.g., HUF76013D3ST. Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified SYMBOL PARAMETER HUF76013P3, HUF76013D3S UNITS VDSS Drain to Source Voltage (Note 1) 20 V VDGR Drain to Gate Voltage (RGS = 20kΩ) (Note 1) 20 V VGS Gate to Source Voltage ±16 V ID ID IDM Drain Current Continuous (TC = 25 oC, V GS = 10V) (Figure 2) Continuous (TC = 100 oC, V GS = 5V) Pulsed Drain Current 20 20 Figure 4 A A A PD Power Dissipation Derate Above 25oC 50 0.4 W W/oC TJ, TSTG Operating and Storage Temperature -55 to 150 oC TL Tpkg Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 300 260 oC oC THERMAL SPECIFICATIONS RθJC Thermal Resistance Junction to Case, TO-220, TO-252 2.5 oC/W RθJA Thermal Resistance Junction to Ambient TO-220 62 oC/W Thermal Resistance Junction to Ambient TO-252 100 oC/W NOTE: 1. TJ = 25 oC to 125oC. CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Data Sheet April 2000 |
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