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R5F6451MLFD Datasheet(PDF) 87 Page - Renesas Technology Corp |
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R5F6451MLFD Datasheet(HTML) 87 Page - Renesas Technology Corp |
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87 / 122 page ![]() R01DS0072EJ0120 Rev.1.20 Page 87 of 116 Aug 07, 2013 R32C/151 Group 5. Electrical Characteristics Notes: 1. Program/erase definition This value represents the number of erasure per block. When the number of program/erase cycles is n, each block can be erased n times. For example, if a word write is performed in 16 different addresses in a block and then the block is erased, this is counted as a single program/erase operation. However, the same address cannot be written to more than once per erasure (overwrite disabled). 2. Data retention includes periods when no supply voltage is applied and no clock is provided. 3. This data retention includes 3000 hours in Ta = 125°C and 7000 hours in Ta = 85°C. Figure 5.3 Power Supply Circuit Timing Table 5.9 Electrical Characteristics of E2dataFlash (VCC = 3.0 to 5.5 V, VSS =0V, and Ta =Topr, unless otherwise noted) Symbol Characteristic Value Unit Min. Typ. Max. — Program/erase cycles (1) 100000 Cycles — Word program time 100 2000 µs — Block erasure time 32 byte block 15 200 ms tPS Flash memory circuit start-up stabilization time 35 50 µs — Data retention (2) Ta = 55°C (3, 4) 20 Years 4. Contact a Renesas Electronics sales office for data retention times other than the above condition. Table 5.10 Power Supply Circuit Timing Characteristics (VCC = 3.0 to 5.5 V, VSS = 0 V, and Ta =Topr, unless otherwise noted) Symbol Characteristic Measurement Condition Value Unit Min. Typ. Max. td(P-R) Internal power supply start-up stabilization time after the main power supply is turned on 2ms t d(P-R) VCC PLL oscillator- output waveform Internal power supply start-up stabilization time after the main power supply is turned on Recommended operating voltage t d(P-R) Supply voltage for internal logic |
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