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SCDF103 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SCDF103
Description  1.0 Amp Glass Passivated Fast Recovery Rectifier
PDF  2 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SCDF103 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SCDF103~SCDF107
Voltage 200 V ~ 1000 V
1.0 Amp Glass Passivated Fast Recovery Rectifier
19-Apr-2013 Rev.C
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Lead free product, compliance to RoHS
GPRC (Glass passivated rectifier chip) inside
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free), solderable
per MIL-STD-750, Method 2026.
Weight : 0.012 gram
MARKING
PACKAGE INFORMATION
Package
MPQ
Leader Size
1206
3K
13’ inch
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Part Number
Parameter
Symbol
SCDF103
SCDF104
SCDF105
SCDF106
SCDF107
Unit
Maximum Repetitive Peak Reverse Voltage
VRRM
200
400
600
800
1000
V
Maximum DC Blocking Voltage
VDC
200
400
600
800
1000
V
Maximum Average Forward
IF(AV)
1
A
Peak Forward Surge Current, 8.3ms single half
sine-wave superimposed on rated load
IFSM
30
A
Maximum Instantaneous Forward Voltage @ 1A
VF
1.3
V
TA=25°C
1
Maximum Repetitive peak
reverse current
TA=125°C
IRRM
30
μA
Maximum Reverse Recovery Time
1
TRR
250
300
nS
Typical Thermal Resistance
3
RθJC
40
°C/W
Typical Thermal Resistance
3
RθJA
130
°C/W
Typical Thermal Resistance
3.4
RθJL
40
°C/W
Typical Junction Capacitance
2
CJ
15
pF
Operating & Storage Temperature
TJ,TSTG
-50~125, -65~150
°C
Notes:
1. Reverse Recovery Time test condition:IF=0.5A, IR=1A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.
4. The thermal resistance in measured over the centered point of the copper pad.
5. Preliminary draft
1206
Cathode Band
G
E
E
D
A
C
B
F
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
3.20
3.60
E
0.50
0.90
B
1.70
2.10
F
R 0.40
C
1.60 TYP.
G
0.05 REF.
D
0.86
1.16


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