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AN2061 Datasheet(PDF) 4 Page - STMicroelectronics

Part # AN2061
Description  External EEPROMs are often used in automotive applications
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2061 Datasheet(HTML) 4 Page - STMicroelectronics

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2 EMBEDDED-FLASH AND EEPROM
Before describing the proposed concept for EEPROM emulation, it is important to remember
the main differences between the embedded-Flash memory of a microcontroller and serial ex-
ternal EEPROMs. Those differences are generic to any microcontroller (i.e.: not specific to
ST10F2xx variants). They are summarized in the table below.
2.1 Difference in write access time
As Flash has shorter write access time, critical parameters can be stored faster in the emulat-
ed EEPROM than in a serial external EEPROM, thereby improving the robustness of the sys-
tem if the same safety concept is kept.
2.2 Difference in writing method
One of the important differences between external EEPROM and emulated EEPROM for em-
bedded applications is the writing method.
– Stand-alone external EEPROM: once started by the CPU, the writing of a word cannot
be interrupted by a CPU reset. Only supply failure will interrupt the writing process; so
properly sizing the decoupling capacitors can secure the complete writing process in-
side a stand-alone EEPROM.
– Emulated EEPROM from an embedded-Flash: once started by the CPU, the writing
can be interrupted by a power failure and by a CPU reset.
This difference should be analysed by system designers to understand the possible impact(s)
in their applications and to define the proper handling method.
2.3 Difference in erase time
The difference in erase time is the other important difference between stand-alone EEPROMs
and emulated EEPROM with embedded-Flash. Unlike Flash, EEPROM does not require a
block erase operation to free-up space before write. This means that some form of software
management is required to store data in Flash. Moreover, as the erase process of a block in
the Flash takes few seconds, power shut-down and other spurious events that may interrupt
Table 1. Differences between Embedded Flash and EEPROM
Feature
EEPROM
Emulated EEPROM from embedded-
Flash
Write time
some ms
random byte : 5 to 10ms
page: equivalent to hundred us / word (5
to 10ms per page)
some us
(ex : 16us per word)
Erase time
N/A
seconds
(ex : 1.5s)
Write method
once started, is not CPU dependent;
needs only proper supply.
once started, is CPU dependent: a CPU
reset will stop the write process even if
supply stays inside specification.
Write access
serial : hundred us
random word : 92us
page : 22.5us /byte
parallel : hundred ns
very few CPU cycles per word.



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