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STS20N3LLH6 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STS20N3LLH6
Description  Low gate drive power losses
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS20N3LLH6 Datasheet(HTML) 5 Page - STMicroelectronics

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STS20N3LLH6
Electrical characteristics
Doc ID 15528 Rev 2
5/13
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=15 V, ID= 10 A,
RG=4.7 Ω, VGS=4.5 V
Figure 13
-
9.5
30
37
12
-
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
20
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
80
A
VSD
(2)
2.
Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward on Voltage
ISD= 20 A, VGS=0
-
1.1
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 20 A,
di/dt = 100 A/µs,
VDD=20 V, Tj=150 °C
Figure 15
-
14
16.8
1.4
ns
nC
A
Obsolete
Product(s)
- Obsolete
Product(s)



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