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THBTGFR421 Datasheet(PDF) 4 Page - Seoul Semiconductor

Part # THBTGFR421
Description  Small size suitable for compact appliances
PDF  13 Pages
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Manufacturer  SEOUL [Seoul Semiconductor]
Direct Link  http://www.seoulsemicon.com
Logo SEOUL - Seoul Semiconductor

THBTGFR421 Datasheet(HTML) 4 Page - Seoul Semiconductor

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서식번호 : SSC- QP- 7- 07- 25 (Rev.0.0)
Rev. 02
Rev. 02
January 2012
January 2012
WWW.SEOULSEMICON.COM
WWW.SEOULSEMICON.COM
[Note] All measurements were made under the standardized environment of SSC.
(Tolerance : I
v ± 10 %, λd ± 2 nm, VF ± 0.1 V)
2. Absolute maximum ratings
3. Electro-Optical Characteristics
*1 I
FM conditions: Pulse width Tw≤1ms and Duty ratio≤1/10
(Ta=25
℃)
50
20
66
Blue
50
20
66
Green
Red
-40 ~ 100
T
stg.
Storage Temperature
mW
69
P
d
Power Dissipation
-40 ~ 85
T
opr.
Operation
Temperature
mA
100
I
FM
*1
Peak Forward
Current
mA
30
I
F
Forward Current
Unit
Value
Symbol
Parameter
10
-
-
V
R=5V
I
R
Red
Reverse Current
1.5
0.86
0.7
I
R=10mA
Green
-
20
-
Δλ
Blue
-
30
-
Green
472
465
460
Blue
85
55
30
Blue
290
220
150
Green
V
R
3.3
3.1
2.7
V
F
Blue
3.3
3.1
2.7
Green
R,G,B
Red
Green
Red
Red
Blue
Red
color
mcd
100
70
50
I
F=10㎃
I
V
Luminous
Intensity*2
635
625
615
I
F=10㎃
-
-
515
0.7
1.7
Min
-
-
535
1.5
2.3
Max
120
15
525
0.86
1.9
Typ
˚
I
F=30 ㎃
(total)
2
θ
1/2
Viewing Angle*3
nm
λ
d
Wavelength
V
I
F=10㎃
Forward Voltage
nm
I
F=10㎃
Spectral
Bandwidth
mA
Reverse Voltage
Unit
Condition
Symbol
Parameter
(Ta=25
℃)
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the
mechanical axis of the LED package.
*3
θ
1/2
is the off-axis where the luminous intensity is 1/2 the peak intensity.



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