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THBTGFR421 Datasheet(PDF) 4 Page - Seoul Semiconductor |
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THBTGFR421 Datasheet(HTML) 4 Page - Seoul Semiconductor |
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4 / 13 page ![]() 서식번호 : SSC- QP- 7- 07- 25 (Rev.0.0) Rev. 02 Rev. 02 January 2012 January 2012 WWW.SEOULSEMICON.COM WWW.SEOULSEMICON.COM [Note] All measurements were made under the standardized environment of SSC. (Tolerance : I v ± 10 %, λd ± 2 nm, VF ± 0.1 V) 2. Absolute maximum ratings 3. Electro-Optical Characteristics *1 I FM conditions: Pulse width Tw≤1ms and Duty ratio≤1/10 (Ta=25 ℃ ℃ ℃ ℃) 50 20 66 Blue 50 20 66 Green Red ℃ -40 ~ 100 T stg. Storage Temperature mW 69 P d Power Dissipation ℃ -40 ~ 85 T opr. Operation Temperature mA 100 I FM *1 Peak Forward Current mA 30 I F Forward Current Unit Value Symbol Parameter ㎂ 10 - - V R=5V I R Red Reverse Current 1.5 0.86 0.7 I R=10mA Green - 20 - Δλ Blue - 30 - Green 472 465 460 Blue 85 55 30 Blue 290 220 150 Green V R 3.3 3.1 2.7 V F Blue 3.3 3.1 2.7 Green R,G,B Red Green Red Red Blue Red color mcd 100 70 50 I F=10㎃ I V Luminous Intensity*2 635 625 615 I F=10㎃ - - 515 0.7 1.7 Min - - 535 1.5 2.3 Max 120 15 525 0.86 1.9 Typ ˚ I F=30 ㎃ (total) 2 θ 1/2 Viewing Angle*3 nm λ d Wavelength V I F=10㎃ Forward Voltage nm I F=10㎃ Spectral Bandwidth mA Reverse Voltage Unit Condition Symbol Parameter (Ta=25 ℃ ℃ ℃ ℃) *2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. *3 θ 1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity. |
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