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BAV20WS Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # BAV20WS
Description  200mW High Voltage SMD Switching Diode
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

BAV20WS Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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background image
- Surface mount device type
- Moisture sensitivity level 1
- Matte tin (Sn) lead finish
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
- Case: Flat lead SOD-323F small outline plastic package
- Polarity: Indicated by cathode band
- Weight: 4.5 ± 0.5 mg
SYMBOL
UNIT
PD
mW
VRRM
V
IF(AV)
mA
TJ , TSTG
oC
SYMBOL
UNIT
CJ
pF
trr
ns
Document Number: DS_S1501004
Version: D15
Taiwan Semiconductor
Small Signal Product
200mW High Voltage SMD Switching Diode
FEATURES
SOD-323F
BAV19WS/BAV20WS/BAV21WS
MECHANICAL DATA
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
VALUE
V
VF
V
VR
PARAMETER
IFSM
A
Junction and Storage Temperature Range
Non-Repetitive Peak Forward
Surge Current
Pulse Width = 1 s
nA
Note 1: Test condition : IR= 100μA
BAV21WS
BAV20WS
BAV19WS
IR
Note 2: Test condition : BAV19WS @ VR=100V, BAV20WS @ VR=150V, BAV21WS @ VR=200V
Note 3: Test condition : IF= IR= 30mA , RL=100Ω , Irr=3mA
Breakdown Voltage
(Note 1)
Reverse Recovery Time (Note 3)
Junction Capacitance
Reverse Leakage Current
(Note 2)
Forward Voltage
VR=0, f=1.0MHz
Pulse Width = 1 μs
Average Rectified Forward Current
Repetitive Peak Reverse Voltage
Power Dissipation
-65 to 150
0.5
2.5
200
250
200
MIN
MAX
120
200
-
250
-1
IF=100mA
BAV21WS
BAV20WS
BAV19WS
IF=200mA
-5
-50
-
-
100
-
-1


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