NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00029C

DOC

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF140J

SFF140JBW

(Unless Otherwise Specified)

Symbol

Min

Typ

Max

Units

Drain to Source Breakdown Voltage

(VGS=0 V, ID=250

µA)

100

––

––

Volts

Drain to Source On State Resistance

(VGS=10 V, ID=50% Rated ID

)

––

0.067

0.077

Ω

On State Drain Current

(VDS>ID(on) X RDS(on) Max, VGS=10V, ID= rated ID)

––

0.125

A

Gate Threshold Voltage

(VDS=VGS, ID= 250

µA)

2.0

2.4

4.0

V

Forward Transconductance

(VDS>ID(on) X RDS(on) Max, IDS= 60% Rated ID

)

8.7

13

––

S(mho)

Zero Gate Voltage Drain Current

(VDS=max rated voltage, VGS=0 V)

(VDS=80% rated VDS, VGS=0 V, TA=150ºC)

––

––

––

––

25

250

µA

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

At rated VGS

––

––

––

––

+100

-100

nA

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS=10 Volts

60% rated VDS

60% Rated ID

––

––

––

40

8

19

75

12

35

nC

Turn on Delay Time

Rise Time

Turn on Delay Time

Fall Time

VDD=50% Rated VDS

60% Rated ID

RG= 6.2

Ω

VGS=10 Volts

td(on)

tr

td(off)

tf

––

––

––

––

15

72

40

50

23

110

60

75

nsec

Diode Forward Voltage

(IS= Rated ID, VGS=0 V, TJ=25ºC)

––

1.3

2.5

V

Diode Reverse Recovery Time

Reverse Recovery Charge

IF=10A

Di/dt=100A/

µsec

––

0.44

150

0.91

400

1.9

nsec

nC

Input Capacitance

Input Capacitance

Reverse Transfer Capacitance

VGS=0 Volts

VDS=25 Volts

f=1 MHz

––

––

––

1750

575

125

––

––

––

pF

For thermal derating curves and other characteristics please contact SSDI Marketing Department.