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LTC1282ACSW Datasheet(PDF) 9 Page - Linear Technology |
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LTC1282ACSW Datasheet(HTML) 9 Page - Linear Technology |
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9 / 24 page ![]() 9 LTC1282 PI FU CTIO S AIN (Pin 1): Analog Input. 0V to 2.5V (Unipolar), ±1.25V (Bipolar). VREF (Pin 2): +1.20V Reference Output. Bypass to AGND (10 µF tantalum in parallel with 0.1µF ceramic). AGND (Pin 3): Analog Ground. D11-D4 (Pins 4 to 11): Three-State Data Outputs. D11 is the Most Significant Bit. DGND (Pin 12): Digital Ground. D3/11-D0/8 (Pins 13 to 16): Three-State Data Outputs. NC (Pins 17 and 18): No Connection. HBEN (Pin 19): High Byte Enable Input. This pin is used to multiplex the internal 12-bit conversion result into the lower bit outputs (D7 and D0/8). See Table 1. HBEN also disables conversion start when HIGH. RD (Pin 20): READ Input. This active low signal starts a conversion when CS and HBEN are low. RD also enables the output drivers when CS is low. CS (Pin 21): The CHIP SELECT Input must be low for the ADC to recognize RD and HBEN inputs. BUSY (Pin 22): The BUSY Output shows the converter status. It is low when a conversion is in progress. VSS (Pin 23): Bipolar Mode — Negative Supply, – 3V. Bypass to AGND with 0.1 µF ceramic. Unipolar Mode — Tie to DGND. VDD (Pin 24): Positive Supply, 3V. Bypass to AGND (10µF tantalum in parallel with 0.1 µF ceramic). Table 1. Data Bus Output, CS and RD = LOW Pin 4 Pin 5 Pin 6 Pin 7 Pin 8 Pin 9 Pin 10 Pin 11 Pin 13 Pin 14 Pin 15 Pin 16 MNEMONIC* D11 D10 D9 D8 D7 D6 D5 D4 D3/11 D2/10 D1/9 D0/8 HBEN = LOW DB11 DB10 DB9 DB8 DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 HBEN = HIGH DB11 DB10 DB9 DB8 LOW LOW LOW LOW DB11 DB10 DB9 DB8 *D11...D0/8 are the ADC data output pins. DB11...DB0 are the 12-bit conversion results, DB11 is the MSB. TEST CIRCUITS Load Circuits for Access Time Load Circuits for Output Float Delay 3k CL CL DBN (A) Hi-Z TO VOH, (t3) AND VOL TO VOH, (t6) (B) Hi-Z TO VOL, (t3) AND VOH TO VOL, (t6) DBN 3k 5V 1282 TC01 DGND DGND 3k 10pF 10pF DBN (A) VOH TO Hi-Z (B) VOL TO Hi-Z DBN 3k 5V 1282 TC02 DGND DGND |
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