SCR006_15 datasheet(1/2 Pages) SSDI

Part #	SCR006

Description	FAST SWITCHING SILICON CONTROLLED RECTIFIER

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	SSDI [Solid States Devices, Inc]

Direct Link	http://www.ssdi-power.com

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1 / 2 page

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

FEATURES:

• Low-Level Gate Characteristics

• IGT = 200 µA (Max) @ 25oC

• Low Holding Current IH = 1 mA (Max) @ 25oC

• Anode Common to Case

• Hermetically Sealed

• TX, TXV, S-Level Screening Available. Consult

Factory

SFS2510 thru SFS2540

25 AMPS

100 ─ 400 VOLTS

FAST SWITCHING

SILICON CONTROLLED

RECTIFIER

TO-48

MAXIMUM RATINGS

(TJ = 25

oC UNLESS OTHERWISE NOTED, RGK = 1K Ω)

Symbol

Value

Units

Peak Repetitive Reverse Voltage

and DC Blocking Voltage

SFS2510

SFS2520

SFS2525

SFS2530

SFS2540

VDRM

VRRM

100

200

250

300

400

Volts

Non-Repetitive Peak Reverse Blocking Voltage

(t ≤ 5.0 ms)

SFS2510

SFS2520

SFS2525

SFS2530

SFS2540

VRSM

150

300

350

400

500

Volts

RMS On-State Current

(All Conduction Angles)

IT (RMS)

35

Amps

Average On-State Current

TC = 50

oC

IT (AV)

25

Amps

Peak Non-Repetitive Surge Current

(One Cycle, 60 Hz, TJ = 120

oC, t = 8.3 ms)

ITSM

210

Amps

Peak Gate Power

PGM

60

Watts

Average Gate Power

PG (AV)

1.0

Watts

Peak Gate Current

IGM

10

Amps

Peak Gate Voltage

VGM

15

Volts

Operating Junction Temperature Range

TJ

-65 to +135

oC

Storage Temperature Range

Tstg

-65 to +150

oC

Thermal Resistance, Junction to Case

RθJC

1.45

oC/W

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