| Electronic Components Datasheet Search |
|
LTC1775CS Datasheet(PDF) 17 Page - Linear Technology |
|
|
|||||||||||||||||||||||||||||
LTC1775CS Datasheet(HTML) 17 Page - Linear Technology |
|
17 / 24 page ![]() 17 LTC1775 losses ranging from 2% to 8% as the output current increases from 0.5A to 2A for a 5V output. I2R losses cause the efficiency to drop at high output currents. 3. Transition losses apply only to the topside MOSFET, and only when operating at high input voltages (typi- cally 20V or greater). Transition losses can be esti- mated from: Transition Loss = (1.7)(VIN2)(IO(MAX))(CRSS)(f) 4. LTC1775 VIN supply current. The VIN current is the DC supply current to the controller excluding MOSFET gate drive current. Total supply current is typically about 850 µA. If EXTVCC is connected to 5V, the LTC1775 will draw only 330 µA from VINandtheremaining520µAwill come from EXTVCC. VIN current results in a small (< 1%) loss which increases with VIN. Other losses including CIN and COUT ESR dissipative losses, Schottky conduction losses during dead time and inductor core losses, generally account for less than 2% total additional loss. Checking Transient Response The regulator loop response can be checked by looking at the load transient response. Switching regulators take several cycles to respond to a step in load current. When a load step occurs, VOUT immediately shifts by an amount equal to ( ∆ILOAD)(ESR), where ESR is the effective series resistance of COUT, and COUT begins to charge or dis- charge. The regulator loop acts on the resulting feedback error signal to return VOUT to its steady-state value. During this recovery time VOUT can be monitored for overshoot or ringing which would indicate a stability problem. The ITH pin external components shown in Figure 1 will provide adequate compensation for most applications. A second, more severe transient is caused by connecting loads with large (> 1 µF) supply bypass capacitors. The discharged bypass capacitors are effectively put in parallel with COUT, causing a rapid drop in VOUT. No regulator can deliver enough current to prevent this problem if the load switch resistance is low and it is driven quickly. The only solution is to limit the rise time of the switch drive in order to limit the inrush current to the load. cycle skipping can occur with correspondingly larger current and voltage ripple. Efficiency Considerations The efficiency of a switching regulator is equal to the output power divided by the input power ( ×100%). Per- cent efficiency can be expressed as: %Efficiency = 100% – (L1 + L2 + L3 + ...) where L1, L2, etc. are the individual losses as a percentage of input power. It is often useful to analyze individual losses to determine what is limiting the efficiency and which change would produce the most improvement. Although all dissipative elements in the circuit produce losses, four main sources usually account for most of the losses in LTC1775 circuits: 1. INTVCC current. This is the sum of the MOSFET driver and control currents. The driver current results from switching the gate capacitance of the power MOSFETs. Each time a MOSFET gate is switched on and then off, a packet of gate charge Qg moves from INTVCC to ground. The resulting current out of INTVCC is typically much larger than the control circuit current. In continu- ous mode, IGATECHG = f(Qg(TOP) + Qg(BOT)). By powering EXTVCC from an output-derived source, the additional VIN current resulting from the driver and control currents will be scaled by a factor of Duty Cycle/ Efficiency. For example, in a 20V to 5V application at 400mA load, 10mA of INTVCC current results in ap- proximately 3mA of VIN current. This reduces the loss from 10% (if the driver was powered directly from VIN) to about 3%. 2. DC I2R Losses. Since there is no separate sense resis- tor, DC I2R losses arise only from the resistances of the MOSFETs and inductor. In continuous mode the aver- age output current flows through L, but is “chopped” between the top MOSFET and the bottom MOSFET. If the two MOSFETs have approximately the same RDS(ON), then the resistance of one MOSFET can simply be summed with the resistance of L to obtain the DC I2R loss. For example, if each RDS(ON) = 0.05Ω and RL = 0.15 Ω, then the total resistance is 0.2Ω. This results in APPLICATIO S I FOR ATIO |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |