STUD15L01 datasheet(2/10 Pages) SAMHOP

2 / 10 page

Symbol

Min

Typ

Max

Units

BVDSS

100

IGSS

±100

VGS(th)

100

m ohm

VGS=10V , ID=6A

RDS(ON)

Drain-Source On-State Resistance

IDSS

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=80V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

ON CHARACTERISTICS

STU/D15L01

Ver 1.2

www.samhop.com.tw

May,16,2014

11.6

3.0

gFS

CISS

480

COSS

CRSS

9.8

10.2

8.5

tD(ON)

7.8

tD(OFF)

VDS=25V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=50V

ID=1A

VGS=10V

RGEN= 6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

VDS=10V , ID=6A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

Forward Transconductance

Reverse Transfer Capacitance

f=1.0MHz

VSD

Qgs

Qgd

1.3

2.9

Gate-Drain Charge

Gate-Source Charge

Diode Forward Voltage

VDS=50V,ID=6A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=1A

0.775

1.3

Notes

VDS=50V,ID=6A,VGS=10V

a.Surface Mounted on FR4 Board of 1 inch2 , 1oz.

b.Guaranteed by design, not subject to production testing.

c.Drain current limited by maximum junction temperature.

d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)

VGS=4.5V , ID=5A

m ohm

150

145

195

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