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STUD1855PL Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # STUD1855PL
Description  S uper high dense cell design for low R DS (ON).
PDF  8 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD1855PL Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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ELEC TR IC AL C HAR AC TE R ISTIC S (TA 25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BVDSS
=
VGS 0V, ID -250uA
=
-55
V
Zero Gate Voltage Drain Current
IDSS
VDS -44V, VGS 0V
==
-1
uA
Gate-Body Leakage
IGSS
VGS
20V, VDS 0V
=
=
100
nA
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
VGS(th)
VDS VGS,ID = -250uA
=
-1.3
-2.5
V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS -10V, ID -10A
VGS -4.5V, ID -6A
On-S tate Drain Current
ID(ON)
VDS =-5V, VGS =-10V
A
S
Forward Transconductance
FS
g
VDS -15V, ID-10A
DYNAMIC CHAR ACTE R IS TICS
c
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
R everse Transfer Capacitance
VDS =-30V, VGS =0V
f=1.0MHZ
P
F
P
F
P
F
S WITCHING CHAR ACTE R IS TICS
c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VD =-30V,
ID =-1A,
VGEN =- 10V,
R GEN =6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =-30V, ID =-5A,
VGS =-10V
nC
nC
nC
C
Fall Time
=
=
=
=
==
5
2
m-ohm
m-ohm
68
85
nC
VDS =-30V,ID =-5A,VGS =-10V
VDS =-30V,ID =-5A,VGS =-4.5V
S T U/D1855P L
20
12
830
110
65
7.1
22.7
59.3
24.9
16.7
8.1
1.9
4.1
985
125
75
8
26
68
28
19
9.5
2.6
4.7
-1.8
50
65



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