2N3053

2N3053A

SILICON

NPN TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3053, 2N3053A

types are epitaxial planar NPN silicon transistors

designed for general purpose applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

2N3053

2N3053A

UNITS

Collector-Base Voltage

VCBO

60

80

V

Collector-Emitter Voltage

VCEO

40

60

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

0.7

A

Power Dissipation (TC=25°C)

PD

5.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

ΘJC

35

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

2N3053

2N3053A

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICEV

VCE=30V, VEB=1.5V

-

250

-

-

nA

ICEV

VCE=60V, VEB=1.5V

-

-

-

250

nA

IEBO

VEB=4.0V

-

250

-

250

nA

BVCBO

IC=100μA

60

-

80

-

V

BVCER

IC=100mA, RBE=10Ω (Note 1)

50

-

70

-

V

BVCEO

IC=100mA (Note 1)

40

-

60

-

V

BVEBO

IE=100μA

5.0

-

5.0

-

V

VCE(SAT)

IC=150mA, IB=15mA

-

1.4

-

0.3

V

VBE(SAT)

IC=150mA, IB=15mA

-

1.7

0.6

1.0

V

VBE(ON)

VCE=2.5V, IC=150mA

-

1.7

-

1.0

V

hFE

VCE=2.5V, IC=150mA

25

-

25

-

hFE

VCE=10V, IC=150mA

50

250

50

250

fT

VCE=10V, IC=50mA, f=100MHz

100

-

100

-

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

-

15

-

15

pF

Cib

VBE=0.5V, IC=0, f=1.0MHz

-

80

-

80

pF

Notes: (1) Pulse width < 300μs, duty cycle < 2%.

TO-39 CASE

R2 (13-December 2013)

www.centr a lsemi.com