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LED780-66-60 Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH |
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LED780-66-60 Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 2 page ![]() 17.08.2011 LED780-66-60 1 of 2 LED780-66-60 TECHNICAL DATA High Power LED Array, 60 chips AlGaAs LED780-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency AlGaAs diode chips, mounted on a metal stem TO-66 with AIN ceramics and covered with double coated clear silicone and epoxy resin. These devices are designed for high current operation with proper heat sinking to improver thermal conductive efficiency. Specifications • Structure: AlGaAs, 60 LED chips • Peak Wavelength: typ. 780 nm • Optical Output Power: typ. 1 W • Package: TO-66 stem with AIN, clear silicon and epoxy resin Absolute Maximum Ratings (TC=25°C) Item Symbol Value Unit Power Dissipation PD 7.8 W Forward Current IF 750 mA Pulsed Forward Current * 1 IFP 3 A Reverse Voltage VR 50 V Operating Temperature Topr -30 … +80 °C Storage Temperature Tstg -30 … +110 °C Soldering Temperature * 2 Tsol 240 °C * 1 duty = 1%, pulse width = 1 µs * 2 must be completed within 3 seconds (Unit: mm) Electro-Optical Characteristics Item Symbol Condition Min. Typ. Max. Unit Total Radiated Power PO IF = 600 mA - 1 - W Total Radiated Power PO IF = 3 A - 4 - W Radiant Intensity IE IF = 600 mA - 450 - mW/sr Forward Voltage VF IF = 600 mA - 9.0 - V Reverse Voltage VR IR = 10 µA 50 - - V Peak Wavelength λ P IF = 600 mA - 780 - nm Half Width Δλ IF = 600 mA - 30 - nm Viewing Half Angle Θ 1/2 IF = 600 mA - ±60 - deg. Rise Time tr IF = 600 mA - 100 - ns Fall Time tf IF = 600 mA - 100 - ns Heat Sink is required, thermal resistance <8K/W Notes • This high power LED must be cooled! • Do not view directly into the emitting area of the LED during operation! • The above specifications are for reference purpose only and subjected to change without prior notice. |
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