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CMPFJ174 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMPFJ174 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() CMPFJ174 CMPFJ175 CMPFJ176 CMPFJ177 SURFACE MOUNT SILICON P-CHANNEL JFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPFJ174 Series devices are epoxy molded P-Channel JFETs manufactured in an SOT-23 case, designed for low level amplifier applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Gate-Drain Voltage VGD 30 V Gate-Source Voltage VGS 30 V Gate Current IG 50 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMPFJ174 CMPFJ175 CMPFJ176 CMPFJ177 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX UNITS IGSS VGS=20V - 1.0 - 1.0 - 1.0 - 1.0 nA IDSS VDS=15V 20 100 7.0 60 2.0 25 1.5 20 mA BVGSS IG=1.0μA 30 - 30 - 30 - 30 - V VGS(off) VDS=15V, ID=10nA 5.0 10 3.0 6.0 1.0 4.0 0.8 2.5 V rDS(ON) VDS=0.1V - 85 - 125 - 250 - 300 Ω MARKING CODES: CMPFJ174: 6V CMPFJ175: 6W CMPFJ176: 6X CMPFJ177: 6Y SOT-23 CASE R6 (2-May 2014) www.centr a lsemi.com |
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