3.6V 1.2W RF Power Amplifier IC for N-PCS/ISM900

MA02104AF

Specifications subject to change without notice.

901753 G

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Rating

Symbol

Value

Unit

5

Vdc

RF Input Power

4

mW

Junction Temperature

150

°C

Storage Temperature Range

-40 to +150

°C

APPLICATION INFORMATION

RF INPUT

RF OUTPUT

C1

C2

T1

L1

C5

C4

N/C

N/C

N/C

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

C3

Figure 1. Evaluation Board Schematic

List of components:

C1 = 0.1µF Kemet multilayer ceramic chip capacitor (C1206C104K5RAC)

C2 = 4700 pF Kemet multilayer ceramic chip capacitor (C0805C472K5RAC)

C4 = 7.5 pF DLI multilayer ceramic chip capacitor (C11AH7R5B5TXL)

C3 = C5 = 100 pF DLI multilayer ceramic chip capacitor (DC Block; C11AH101K5TXL)

L1 = 39 nH Coilcraft chip inductor (1008CS.390XMBB)

T1 = 0.13" of 50

Ω==grounded coplanar waveguide (60 mil GETEK board)

Component layout and printed circuit board drawing for RF IC evaluation board are shown in Figure 6.