MRF10031 datasheet(2/4 Pages) MACOM

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0)

V(BR)CES

—

Vdc

Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0)

V(BR)CBO

—

Vdc

Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0)

V(BR)EBO

3.5

—

Vdc

Collector Cutoff Current (VCB = 36 Vdc, IE = 0)

ICBO

—

2.0

mAdc

ON CHARACTERISTICS

DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc)

hFE

—

FUNCTIONAL TESTS (10

µs Pulses @ 50% duty cycle for 3.5 ms; overall duty cycle – 25%)

Common–Base Amplifier Power Gain

(VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz)

GPB

9.0

9.5

—

Collector Efficiency

(VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz)

—

Load Mismatch

(VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz,

VSWR = 10:1 All Phase Angles)

No Degradation in Output Power

Figure 1. Test Circuit

RF INPUT

D.U.T.

RF OUTPUT

36 Vdc

.083

.223

.733

.118

.628

1.350

.669

.780

1.210

.128

.083

.400

1.020

.218

.389

.354

.083

.100

.113

.215

BROADBAND FIXTURE

C1 — 75 pF 100 Mil Chip Capacitor

C2 — 39 pF 100 Mil Chip Capacitor

C3 — 0.1

µF

C4 — 1000

µF, 50 Vdc, Electrolytic

L1 — 3 Turns #18 AWG, 1/8

″ ID, 0.18 Long

Z1–Z9 — Microstrip, See Details

Board Material — Teflon, Glass Laminate

Dielectric Thickness = 0.030

″

εr = 2.55, 2 Oz. Copper

2.138

REV 6

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