Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage

(VGS = 0, ID = 5.0 mA)

V(BR)DSS

65

—

—

Vdc

Zero–Gate Voltage Drain Current

(VDS = 28 V, VGS = 0)

IDSS

—

—

2.0

mAdc

Gate–Source Leakage Current

(VGS = 40 V, VDS = 0)

IGSS

—

—

1.0

µAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = 10 V, ID = 25 mA)

VGS(th)

1.0

3.0

6.0

Vdc

Forward Transconductance

(VDS = 10 V, ID = 250 mA)

gfs

250

400

—

mmhos

DYNAMIC CHARACTERISTICS (1)

Input Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Ciss

—

24

—

pF

Output Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Coss

—

27

—

pF

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Crss

—

5.5

—

pF

FUNCTIONAL CHARACTERISTICS

Noise Figure

(VDS = 28 Vdc, ID = 500 mA, f = 150 MHz)

NF

—

1.0

—

dB

Common Source Power Gain (Figure 1)

(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA)

Gps

13

16

—

dB

Drain Efficiency (Figure 1)

(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA)

η

50

60

—

%

Electrical Ruggedness (Figure 1)

(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA,

VSWR 30:1 at all Phase Angles)

ψ

No Degradation in Output Power

NOTES:

1. Each side measured separately.

2

REV 7