1 of

2

Optimum Technology Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©20

12, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

LDMOS



GPCTRL3

GND

GND

GND

RX4

GND

RFIN HB

RFIN LB

TD_EN

ANTENNA

ESD

Protection

78

6

5

4

3

2

122

20

19

18

17

16

15

14

13

12

11

10

9

Amplifier

Switch

CMOS Controller

21

RF9812

QUAD-BAND GPRS/LINEAR EDGE +3.2V

TD-SCDMA MULTI-MODE TRANSMIT MODULE

The RF9812 is a Quad Band EDGE+TD-SCDMA Multi-Mode Transmit Module with the capability

to support both GSM/GPRS/Linear EDGE (GSM850/EGSM900/DCS1800/PCS1900) and

TDSCDMA (1880MHz to 1920MHz and 2010MHz to 2025MHz) B34/39 frequency bands. The

RF9812 continues to build upon RFMD’s leading patented PowerStar® Architecture to include

Mode. RFMD has integrated TD-SCDMA functionality into the RF9812, so it can be used as the

transmit module in 3.2V, 50

 GSM/EDGE/TD-SCDMA dual-mode cellular equipment.

The RF9812 module includes a multi-function CMOS controller, GaAs HBT power amplifier, and

pHEMT front end antenna switch. The amplifier devices are manufactured on RFMD’s Advance

Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) Process, which is designed to

operate either in saturated mode for GMSK or linear mode for EDGE 8PSK and TD-SCDMA sig-

naling. The highly integrated EDGE+TD-SCDMA transmit module simplifies GSM/TD-SCDMA

dual-mode handset and data card design by eliminating the need for complicated control loop

design, output RF spectrum (ORFS) optimization, harmonic filtering, and component matching,

all of which combine to provide best in class RF performance, solution size, and ease of imple-

mentation for GSM/EDGE/TD-SCDMA dual-mode cellular phone and data card systems. The RF

ports are 50

 matched and the antenna port includes ESD protection circuitry which meets the

stringent 8kV industry standards requiring no additional components. All of these eliminated

factors help to improve the customer’s product time to market.

Features



TD-SCDMA Compliant

B34/39



TD-HSDPA and TD-HSPA+

Compliant



+25 dBm Output Power TD-

SCDMA



Low Gain Mode for reduced



• GSM850/EGSM900=41/40%

• DCS1800/PCS1900=38/36%



Integrated Power Flattening

Circuit for Lower Power Varia-

tion Under Mismatch Condi-

tions



cuit for improved Switching

Conditions



Symmetrical RX Ports



Robust 8kV ESD Protection at

Antenna Port



Pin Compatible with RF9810

Applications



3.2V Quad-Band

GSM/GPRS/EDGE and Dual-

Band TD-SCDMA Handsets



Mobile GPRS/EDGE/

TD-SCDMA Data Products



GPRS Class 12 Compliant

Products

DS120910



Package: 22-pin Module, 6.63mm x 5.24mm x 1.00mm

RF9812QUAD-

BAND 3.2V

MULTI-MODE

TRANSMIT

MODULE