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SGA2286Z Datasheet(PDF) 2 Page - RF Micro Devices

Part # SGA2286Z
Description  DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER
PDF  6 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SGA2286Z Datasheet(HTML) 2 Page - RF Micro Devices

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DS100915
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA2286Z
Typical Performance at Key Operating Frequencies
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)40
mA
Max Device Voltage (VD)4
V
Max RF Input Power
+18
dBm
Max Junction Temp (TJ)+150
°C
Operating Temp Range (TL)
-40 to +85
°C
Max Storage Temp
+150
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Parameter
Unit
100MHz
500MHz
850MHz 1950MHz 2400MHz 3500MHz
Small Signal Gain
dB
15.1
15.0
14.0
12.6
Output Third Order Intercept Point
dBm
20.5
20.0
19.4
19.6
Output Power at 1dB Compression
dBm
7.4
8.3
7.0
5.9
Input Return Loss
dB
25.6
20.3
17.1
16.8
16.9
13.7
Output Return Loss
dB
22.8
25.2
27.1
19.5
20.1
24.0
Reverse Isolation
dB
18.3
18.5
18.7
19.0
19.1
19.5
Noise Figure
dB
3.2
3.2
3.5
3.8
Test Conditions: VS=5V, ID=20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=140Ω, TL=25°C, ZS=ZL=50Ω
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
OIP
3 vs. Frequency
V
D= 2.2 V, ID= 20 mA
T
L
P
1dB vs. Frequency
V
D= 2.2 V, ID= 20 mA
T
L
10
15
20
25
30
00.511.5
2
2.5
3
Frequency (GHz)
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
T
L=+25ºC
T
L=+25ºC
Noise Figure vs. Frequency
V
D= 2.2 V, ID= 20 mA
T
L=+25ºC
0
1
2
3
4
5
00.511.522.5
3
Frequency (GHz)
T
L=+25ºC



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