GaAs SPDT Terminated Switch, DC - 3.0 GHz

SW-442

M/A-COM Division of AMP Incorporated

3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298

3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020

www.macom.com

AMP and Connecting at a Higher Level are trademarks.

Specifications subject to change without notice.

V2.00

GaAs SPDT Terminated Switch

DC - 3.0 GHz

SW-442

Features

Description

M/A-COM’s SW-442 is a GaAs monolithic switch in a low cost

SOT-26 surface mount plastic package. The SW-442 is ideally

suited for applications where very low power consumption, low

insertion loss, very small size and low cost are required. Typical

application is in dual band systems where switching between

small signal components is required such as filter banks, single

band LNA's, converters etc. The SW-442 can be used in applica-

tions up to 0.25 Watts in systems such as CDMA, W-CDMA,

PCS, DCS1800, GSM and other analog/digital wireless commu-

nications systems.

The SW-442 is fabricated using a mature 0.8 micron GaAs

MESFET process. The process features full passivation for

increased performance and reliability.

SOT-26 Plastic Package

Electrical Specifications T

Ordering Information

Part Number

Package

SW-442 PIN

SOT-26 Plastic Package

SW-442TR

Forward Tape and Reel

1

SW-442RTR

Reverse Tape and Reel

1

SW-442SMB

Sample Board

1. Reference Application Note M513 for reel size information.

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

DC - 1 GHz

dB

0.5

0.7

1- 2 GHz

dB

0.8

1.0

2 - 3 GHz

dB

1.1

1.25

Isolation

DC - 1 GHz

dB

36

38

1 - 2 GHz

dB

25

28

2 - 3 GHz

dB

21

22

VSWR

DC - 2 GHz

1.4:1

1.5:1

2 - 3 GHz

1.6:1

1.7:1

P

500 MHz - 3 GHz

dBm

24

P

500 MHz - 3 GHz

dBm

28

IP

2-Tone 900 MHz, 5 MHz spacing, 10 dBm each tone

dBm

80

IP

2-Tone 900 MHz, 5 MHz spacing, 10 dBm each tone

dBm

50

T

T

Transients

10% to 90% RF, 90% to 10% RF

50% Control to 90% RF, Control to 10% RF

In-Band

ns

ns

mV

40

60

10

Gate Leakage

V

µA

6

15

PIN1

XX#Y