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IRFS7730PBF Datasheet(PDF) 3 Page - International Rectifier |
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IRFS7730PBF Datasheet(HTML) 3 Page - International Rectifier |
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3 / 12 page  IRFB/S/SL7730PbF 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 249 ––– ––– S VDS = 10V, ID =100A Qg Total Gate Charge ––– 271 407 ID = 100A Qgs Gate-to-Source Charge ––– 55 ––– VDS = 38V Qgd Gate-to-Drain Charge ––– 79 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg– Qgd) ––– 192 ––– td(on) Turn-On Delay Time ––– 21 ––– ns VDD = 38V tr Rise Time ––– 120 ––– ID = 100A td(off) Turn-Off Delay Time ––– 180 ––– RG= 2.7 tf Fall Time ––– 115 ––– VGS = 10V Ciss Input Capacitance ––– 13660 ––– pF VGS = 0V Coss Output Capacitance ––– 1120 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 690 ––– ƒ = 1.0MHz, See Fig.7 Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 1060 ––– VGS = 0V, VDS = 0V to 60V Coss eff.(TR) Output Capacitance (Time Related) ––– 1275 ––– VGS = 0V, VDS = 0V to 60V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 246 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 984* integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 100A,VGS = 0V dv/dt Peak Diode Recovery dv/dt ––– 16 ––– V/ns TJ = 175°C,IS =100A,VDS = 75V trr Reverse Recovery Time ––– 44 ––– ns TJ = 25°C VDD = 64V ––– 51 ––– TJ = 125°C IF = 100A, Qrr Reverse Recovery Charge ––– 70 ––– nC TJ = 25°C di/dt = 100A/µs ––– 97 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 2.6 ––– A TJ = 25°C nC D S G |
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