2

Absolute

Symbol

Parameter

Units

Maximum

V

d

DC Supply Voltage

V

8

P

diss

mW

448

P

RF Input Power (Vd=5V)

dBm

15

T

CH

Channel Temperature

°C

150

T

STG

Storage Temperature

°C

-65 to 150

θ

ch_b

°C/W

91

ESD (Human Body Model)

V

100

ESD (Machine Model)

V

30

Notes:

1. Operation of this device in excess of

any one of these parameters may cause

permanent damage.

2. Board (package belly) temperature T

25°C. Derate 11 mW/°C for T

3. Channel-to-board thermal resistance

measured using 150°C Liquid Crystal

Measurement method.

Electrical Specifications

T

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

P

sat

Saturated Power at 0 dBm input

dBm

18.5

20

Vd = 3V

dBm

17

I

dsat

Saturation Current

mA

58

67

Vd = 3V

mA

45

Reverse Isolation

dB

42

50

Gain

Small Signal Gain

dB

20

21.8

23.5

Vd = 3V

20

I

ds

Small Signal Current (P

mA

33

37

Vd = 3V

27

Return Loss

Input

dB

-8

Output

-10

Notes:

1. Typical value determined from a sample size of 500 parts from 3 wafers.

2. Measurement obtained using production test board described in the block diagram below. Circuit losses have been de-embedded from

actual measurements.

Figure 1. Production Test Circuit Schematic at 2 GHz.

22 pF

22 pF

8

4

3

1

2

7

Buffer

Amplifier

22 pF

5V

12 nH

+

1000 pF

0 Ohm

5

6