BAS85

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Product data sheet

Rev. 6 — 10 September 2010

3 of 10

NXP Semiconductors

BAS85

Schottky barrier diode

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7.

Characteristics

[1]

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

in free air

[1] -

-

320

K/W

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

-

-

240

mV

-

-

320

mV

-

-

400

mV

-

-

500

mV

-

-

800

mV

reverse current

[1] --2.3

μA

diode capacitance

--10

pF