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IRLL024ZPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRLL024ZPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  IRLL024ZPbF HEXFET® Power MOSFET VDSS = 55V RDS(on) = 60mΩ ID = 5.0A 09/27/10 www.irf.com 1 SOT-223 This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combinetomakethisdesignanextremelyefficient and reliable device for use in a wide variety of applications. S D G Description l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Features Absolute Maximum Ratings Parameter Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) i ID @ TA = 70°C Continuous Drain Current, VGS @ 10V i A IDM Pulsed Drain Current PD @TA = 25°C Power Dissipation i PD @TA = 25°C Power Dissipation j W Linear Derating Factor i W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energyd mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient (PCB mount, steady state) i ––– 45 °C/W RθJA Junction-to-Ambient (PCB mount, steady state) j ––– 120 -55 to + 150 1.0 0.02 ± 16 Max. 5.0 4.0 40 2.8 38 21 See Fig.12a, 12b, 15, 16 PD - 95990A |
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