| Electronic Components Datasheet Search |
|
25PTS Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd |
|
|
|||||||||||||||||||||||||||||
25PTS Datasheet(HTML) 2 Page - Nell Semiconductor Co., Ltd |
|
2 / 6 page ![]() SEMICONDUCTOR RoHS RoHS Nell High Power Products FORWARD CONDUCTION PARAMETER SYMBOL UNITS TEST CONDITIONS VALUES Maximum average forward current at case temperature IT(AV) 180° conduction, half sine wave IT(RMS) Maximum RMS forward current 25 A 85 ºC 40 Maximum peak, one-cycle non-reptitive surge current ITSM t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100%VRRM reapplied No voltage reapplied 100%VRRM reapplied 2 I t Sinusoidal half wave, initial T = T maximum J J 420 440 350 370 882 804 625 569 2 A s A A 8820 t = 0.1 to 10 ms, no voltage reapplied, 2 I √t Maximum l²t for fusing Maximum l²√t for fusing 2 A √s Low level value of threshold voltage VT(TO)1 0.99 V High level value of threshold voltage VT(TO)2 Low level value of on-state slope resistance 10.1 mΩ High level value of on-state slope resistance Maximum on-state voltage Maximum holding current 130 mA Latching current 200 rt1 rt2 VTM lH lL T = T maximum J J (16.7 % x π x l < l < ), T(AV) πx lT(AV) T = T maximum J J (l > ), πx lT(AV) T = T maximum J J (16.7 % x π x l < l < ), T(AV) πx lT(AV) T = T maximum J J (l > ), πx lT(AV) T = T maximum J J l = 79 A, T = 25°C pk J T = 25 °C, anode supply 6 V, resistive load J 1.40 5.7 1.70 Note SWITCHING Maximum rate of rise of turned-on current A/ µs 150 Typical turn-on time 0.9 µs Typical reverse recovery time 4 Typical turn-off time 110 BLOCKING Maximum critical rate of rise of off-state voltage dV/dt V/µs 1000 T = T maximum, I = I , t > 200 µs, V = 100 V, J J TM T(AV) p R dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % V , DRM gate bias 0 V to 100 V T = T maximum, J I = I , t > 200 µs, dI/dt = - 10 A/µs TM T(AV) p J PARAMETER SYMBOL UNITS TEST CONDITIONS VALUES T = 25 °C, J at rated V /V , T = 125 °C DRM RRM J T = T maximum, V = 2/3 V , t = 200 J J DM DRM P I = 0.3A, dI /dt = 0.3 A/us, T = 125 °C G G J µs V dl/dt tgt trr tq t = 10 µs up to 600 V, t = 30 µs up to 1600 V available on special request q q PARAMETER SYMBOL UNITS TEST CONDITIONS VALUES T = T maximum linear to 67 % rated V , gate open J J DRM 25PTS Series Page 2 of 6 www.nellsemi.com |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |