BFS25A_15 datasheet(2/11 Pages) JMNIC

2 / 11 page

December 1997

Philips Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFS25A

FEATURES

• Low current consumption

• Low noise figure

• Gold metallization ensures

excellent reliability

• SOT323 envelope.

DESCRIPTION

NPN transistor in a plastic SOT323

envelope.

It is designed for use in RF amplifiers

and oscillators in pagers and pocket

phones with signal frequencies up to

2 GHz.

PINNING

DESCRIPTION

Code: N6

base

emitter

collector

Fig.1 SOT323.

handbook, 2 columns

MBC870

Top view

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector tab.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

VCEO

collector-emitter voltage

open base

−−

DC collector current

−−

6.5

Ptot

total power dissipation

up to Ts = 170 °C; note 1

−−

hFE

DC current gain

IC = 0.5 mA; VCE = 1 V; Tj =25 °C

200

transition frequency

IC = 1 mA; VCE = 1 V; f = 1 GHz;

Tamb =25 °C

3.5

−

GHz

GUM

maximum unilateral power gain

Ic = 0.5 mA; VCE = 1 V; f = 1 GHz;

Tamb =25 °C

−

noise ﬁgure

Ic = 0.5 mA; VCE = 1 V; f = 1 GHz;

Tamb =25 °C

−

1.8

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

DC collector current

−

6.5

Ptot

total power dissipation

up to Ts = 170 °C; note 1

−

Tstg

storage temperature

−65

150

°C

junction temperature

−

175

°C

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