D4120P

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

VER.a

°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

350

V

Collector-Emitter Voltage

200

V

Emitter-Base Voltage

7

V

Continuous Collector Current

1.5

A

Collector Power Dissipation

1

W

Junction Temperature

150

°C

Storage Temperature

-55~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θ

JA

125

°C/W

°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Emitter Sustaining Voltage

200

V

Collector -Base Breakdown Voltage

350

V

Collector -Base Breakdown Voltage

7

V

Collector Cut-Off Current

100

µA

Collect Emitter Cut-off Current

50

µA

Emitter Cut-Off Current

10

µA

8

50

Static Forward Current Transfer Ratio

5

0.5

V

Collector-Emitter Saturation Voltage

2

V

Base-Emitter Saturation Voltage

1.5

V

Fall Time

0.5

µS

Storage Time

4

µS

Input Resistance

4

MHz

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.