LM4875MMSLASHNOPB datasheet(2/21 Pages) TI

2 / 21 page

LM4875

SNAS042C – JANUARY 2002 – REVISED MAY 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1) (2)

Supply Voltage

6.0V

Storage Temperature

−65°C to +150°C

Input Voltage

−0.3V to VDD +0.3V

Power Dissipation(3)

Internally Limited

ESD Susceptibility(4)

2000V

ESD Susceptibility(5)

200V

Junction Temperature

150°C

Vapor Phase (60 sec.)

215°C

Soldering Information

Infrared (15 sec.)

220°C

θJC (D)

35°C/W

θJA (D)

150°C/W

Thermal Resistance

θJC (DGK)

56°C/W

θJA (DGK)

190°C/W

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical

specifications under particular test conditions that ensure specific performance limits. This assumes that the device operates within the

Operating Ratings. Specifications are not ensured for parameters where no limit is given. The typical value, however, is a good

indication of device performance.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature

TA. The maximum allowable power dissipation is PDMAX = (TJMAX − TA)/θJA or the number given in the Absolute Maximum Ratings,

whichever is lower. For the LM4875M, TJMAX = 150°C.

(4)

Human body model, 100pF discharged through a 1.5k

Ω resistor.

(5)

Machine Model, 220pF–240pF discharged through all pins.

OPERATING RATINGS

Temperature Range

TMIN ≤ TA ≤ TMAX

−40°C ≤ TA ≤ +85°C

Supply Voltage

2.7V

≤ VDD ≤ 5.5V

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