UP1496G-AE3-R datasheet(2/3 Pages) UTC

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UP1496

Preliminary

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-095.b

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-220

Collector-Emitter Voltage

VCEO

-200

Emitter-Base Voltage

VEBO

-5

Collector Current

-0.3

Peak Pulse Current

ICM

-1

Base Current

-200

Collector Dissipation (Ta=25°С)

500

Junction Temperature

+150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-100 µA

-220

Collector-Emitter Breakdown Voltage

BVCEO

IC=-10 mA (Note)

-200

Emitter-Base Breakdown Voltage

BVEBO

IE =-100 µA

-5

Collector Cutoff Current

ICBO

VCB=-200 V

-100

Emitter Cutoff Current

IEBO

VEB=-4 V

-100

Collector -Emitter Cut-off Current

ICES

VCES=-200 V

-100

VCE=-10V , IC=-1mA

100

VCE=-10V , IC=-100mA (Note)

100

VCE=-10V , IC=-250mA (Note)

300

DC Current Transfer Ratio

hFE

VCE=-10V , IC=-400mA (Note)

Base-Emitter Turn-On Voltage

VBE(ON)

VCE=-10V , IC =-250 mA (Note)

-0.9

IC=-100mA, IB=-10mA

-0.2

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-250mA, IB=-25mA (Note)

-0.35

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-250mA, IB=-25mA (Note)

-1.0

Transition Frequency

VCE =-10V , IC=-50mA, f=100MHz

150

MHz

Output Capacitance

COB

VCB=-10V, f=1MHz

Note: Measured under pulse conditions. Pulse width=300µs. Duty cycle≤2%.

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