TUL1102G-TQ2-R datasheet(2/5 Pages) UTC

2 / 5 page

TUL1102

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R203-034.D



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage (VBE = 0)

VCES

1100

Collector-Emitter Voltage (IB = 0)

VCEO

450

Emitter-Base Voltage (IC = 0)

VEBO

Collector Current

Collector Peak Current (tP <5 ms)

ICM

Base Current

Base Peak Current (tP <5 ms)

IBM

Power Dissipation

(TC = 25°C)

TO-220/TO-263

TO-220F1

TO-251/TO-252

Junction Temperature

+150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently.

Absolute maximum ratings are only stress ratings and it is not implied for functional device operation.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Case

TO-220/TO-263

θJC

1.78

°C/W

TO-220F1

4.2

TO-251/TO-252

2.78



ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cut-off Current

ICES

VCE = 1100 V, VBE = 0

100

µA

Emitter Cut-off Current

IEBO

VEB = 12 V, IB = 0

Collector-Emitter Sustaining Voltage

VCEO(SUS) IC = 100mA, IB = 0 (Note)

450

Collector-Emitter Saturation Voltage

VCE(SAT) IC = 2 A, IB = 400 mA (Note)

1.5

Base-Emitter Saturation Voltage

VBE(SAT)

IC = 2 A, IB = 400 mA (Note)

1.5

DC Current Gain (Note)

hFE

IC = 250mA, VCE = 5 V

IC = 2A, VCE =5V

Resistive Load

Storage Time

IC = 2.5 A,

VCC= 250 V

IB1=0.5A,IB2=1A

2.5

µs

Fall Time

TP = 30 ms

300

Avalanche Energy

EAR

L = 2mH, C = 1.8nF

IBR ≤ 2.5A, 25°C < TC <125°C

Note: Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

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