DTA115EG-AE3-R datasheet(2/3 Pages) UTC

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DTA115E

PNP EPITAXIAL SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

www.unisonic.com.tw

QW-R220-016.C



ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

-50

Input Voltage

VIN

-40~+10

IOUT

-20

Output Current

IC(MAX)

-100

Power Dissipation

200

Junction Temperature

150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VIN(OFF)

VCC= -5V, IOUT=-100μA

-0.5

Input Voltage

VIN(ON)

VOUT= -0.3V,IOUT= -1mA

-3

Output Voltage

VOUT(ON) IOUT= -5mA, IIN= -0.25mA

-0.1

-0.3

Input Current

IIN

VIN= -5V

-0.15

Output Current

IOUT(OFF) VCC= -50V , VIN=0V

-0.5

μA

DC Current Gain

VOUT= -5V,IOUT= -5mA

Input Resistance

100

130

kΩ

Resistance Ratio

R2/R1

0.8

1.2

Transition Frequency

VCE= -10 V, IE= 5mA, f=100MHz

(Note)

250

MHz

Note: Transition frequency of the device

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