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DTC115EG-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # DTC115EG-AE3-R
Description  NPN DIGITAL TRANSISTOR
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

DTC115EG-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies

  DTC115EG-AE3-R Datasheet HTML 1Page - Unisonic Technologies DTC115EG-AE3-R Datasheet HTML 2Page - Unisonic Technologies DTC115EG-AE3-R Datasheet HTML 3Page - Unisonic Technologies DTC115EG-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
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DTC115E
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-055.D
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
50
V
Input Voltage
VIN
-10 ~ +40
V
Output Current
IOUT
20
mA
IOUT(MAX)
100
Power Dissipation
SOT-23/SOT-323
PC
200
mW
SOT-523
150
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Input Voltage
VI(OFF)
VCC=5V, IOUT=100μA
0.5
V
VI(ON)
VOUT=0.3V, IOUT=1mA
3
Output Voltage
VOUT(ON)
IOUT=5mA, IIN=0.25mA
0.1
0.3
V
Input Current
IIN
VIN= 5V
0.15
mA
Output Current
IO(OFF)
VCC=50V, VIN=0V
0.5
μA
DC Current Gain
hFE
VOUT= 5V, IOUT= 5mA
82
Input Resistance
R1
70
100
130
kΩ
Resistance Ratio
R2/R1
0.8
1
1.2
Transition Frequency
fT
VCE=10V, IE=-5mA, f=100MHz (Note)
250
MHz
Note: Transition frequency of the device



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