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UP3855G-AA3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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UP3855G-AA3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() UP3855 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R225-007.A TYPICAL CHARACTERISTICS 1 0.01 Collector-Emitter Voltage,-VCE(V) 10 1 0.1 0.1 100 1.0s 100 TA=25ºC Power Dissipatio vs Ambient Temperature DC 10 10ms 100ms 1ms 100m 1 VCE(SAT) vs. IC 0.0 0.5 1.0 1.5 2.0 Collector Current, -IC (A) IC /IB=10 25°C 55°C 0.6 0.4 1 hFE vs. IC 0.8 1.0 1.2 1.4 1.6 1m 10m 100m 50 0 150 200 250 250 100 Collector Current, -IC (A) 55ºC 25ºC 1m 10m 100m 1 0.4 0.6 0.8 1.0 1.2 55°C 25°C VBE(SAT) vs. IC Collector Current, -IC (A) 1.4 IC / IB=10 VCE=5V 1m 10m 100m 1 VCE(SAT) vs. IC Collector Current, -IC (A) 10m 100m 1 IC /IB=10 IC /IB=20 IC /IB=50 TA=25°C 1m 10m 100m 1 0.4 0.6 0.8 1.0 1.2 55°C 25°C VBE(ON) vs. IC Collector Current, -IC (A) 1.4 VCE=5V 300μs |
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