UK1398G-AE3-R datasheet(3/5 Pages) UTC

3 / 5 page

UK1398

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-256.J



ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±7.0

Continuous Drain Current

±100

Pulse(Note 2)

±200

Power Dissipation

SOT-23

200

TO-92

625

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note:1.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Pulse width≤10ms, Duty cycle≤50%



ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

Drain-Source Leakage Current

IDSS

VDS=50V, VGS=0V

µA

Gate-Source Leakage Current

IGSS

VGS=±7.0V, VDS=0 V

±5.0

µA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS , ID=250µA

1.0

3.0

VGS(OFF)

VDS=3.0V, ID=1.0µA

0.6

1.2

1.5

Static Drain-Source On-Resistance

RDS(ON)

VGS=2.5V, ID=10mA

Ω

VGS=4.0V, ID=10mA

Ω

Forward Transconductance

gFS

VDS=3.0V, ID=10mA

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=3.0V, VGS=0V, f=1MHz

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

VDD=3.0V, ID=20mA,

VGS(ON)=3.0V, RG=10Ω,

RL=150Ω

Turn-ON Rise Time

100

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

VSD

IS=1A, VGS=0V

1.3

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