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UT4422G-S08-R Datasheet(PDF) 5 Page - Unisonic Technologies |
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UT4422G-S08-R Datasheet(HTML) 5 Page - Unisonic Technologies |
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5 / 6 page ![]() UT4422 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 5 of 6 www.unisonic.com.tw QW-R502-206.C TYPICAL CHARACTERISTICS(Cont.) 30 25 20 15 10 5 0 0 250 500 750 1000 1250 1500 10 8 6 4 2 0 04 8 12 16 20 Gate-Charge Characteristics Gate Charge,QG (nC) Drain to Source Voltage,VDS (V) Capacitance Characteristics VDS=15V ID=11A CISS COSS CRSS 100.0 10.0 1.0 0.1 0.1 1 10 100 Maximum Forward Biased Safe Operating Area Drain to Source Voltage,VDS (V) TJ(Max)=150°С TA=25°С Single Pulse Power Rating Junction-to-Ambient Pulse Width (s) 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 TJ(Max)=150°С TA=25°С 50 RDS(ON) Limited 10μs 100μs 1ms 10s DC 1s 0.1s 10ms 10 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Normalized Maximum Transient Thermal Impedance In descending order D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse D=TON/T TJ,PK=TA+PDM.ZθJA.θJA θJA=40°С/W Single Pulse PDM TO N T |
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