UTD484G-TN3-R datasheet(4/8 Pages) UTC

4 / 8 page

UTD484

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 8

www.unisonic.com.tw

QW-R502-207.E



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =250 µA

Drain-Source Leakage Current

IDSS

VDS =24V, VGS =0 V

µA

Gate-Body Leakage Current

IGSS

VDS =0 V, VGS = ±20V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID =250 µA

1.5

2.5

On State Drain Current

ID(ON)

VDS =5 V, VGS =10V

Static Drain-Source On-Resistance

RDS(ON)

VGS =10 V, ID =20 A

12.1

mΩ

VGS =4.5 V, ID =15 A

18.5

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS =15 V, VGS =0V, f=1MHz

938

1220

Output Capacitance

COSS

142

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

VDS =15V, VGS =10V, ID =20 A

17.5

Gate Source Charge

QGS

Gate Drain Charge

QGD

4.1

Turn-ON Delay Time

tD(ON)

VGS=10V,VDS=15V,RL=0.75Ω,

RGEN =3Ω

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

VSD

IS=1A,VGS=0V

0.71

Maximum Body-Diode Continuous

Current

Body Diode Reverse Recovery Time

tRR

IF=20 A, dI/dt=100A/μs

Body Diode Reverse Recovery Charge

QRR

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