PESDXS2UT datasheet(5/13 Pages) PHILIPS

5 / 13 page

2004 Apr 15

NXP Semiconductors

Product data sheet

Double ESD protection diodes in SOT23

package

PESDxS2UT series

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VRWM

reverse stand-off voltage

PESD3V3S2UT

−

3.3

PESD5V2S2UT

−

5.2

PESD12VS2UT

−

PESD15VS2UT

−

PESD24VS2UT

−

IRM

reverse leakage current

PESD3V3S2UT

VRWM = 3.3 V

−

0.7

µA

PESD5V2S2UT

VRWM = 5.2 V

−

0.15

µA

PESD12VS2UT

VRWM = 12 V

−

<0.02

µA

PESD15VS2UT

VRWM = 15 V

−

<0.02

µA

PESD24VS2UT

VRWM = 24 V

−

<0.02

µA

VBR

breakdown voltage

IZ = 5 mA

PESD3V3S2UT

5.2

5.6

6.0

PESD5V2S2UT

6.4

6.8

7.2

PESD12VS2UT

14.7

15.0

15.3

PESD15VS2UT

17.6

18.0

18.4

PESD24VS2UT

26.5

27.0

27.5

diode capacitance

f = 1 MHz; VR = 0 V

PESD3V3S2UT

−

207

300

PESD5V2S2UT

−

152

200

PESD12VS2UT

−

PESD15VS2UT

−

PESD24VS2UT

−

V(CL)R

clamping voltage

notes 1 and 2

PESD3V3S2UT

Ipp = 1 A

−

Ipp = 18 A

−

PESD5V2S2UT

Ipp = 1 A

−

Ipp = 15 A

−

PESD12VS2UT

Ipp = 1 A

−

Ipp = 5 A

−

PESD15VS2UT

Ipp = 1 A

−

Ipp = 5 A

−

PESD24VS2UT

Ipp = 1 A

−

Ipp = 3 A

−

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